1/2 semiconductor technical data silicon epitaxial planar diode 2005. 6. 21 KDS165T revision no : 0 ultra high speed switching application. features low forward voltage. fast reverse recovery time. small total capacitance. maximum rating (ta=25 ) dim millimeters a b d d1 d2 e tsq 2.9 0.2 1.6+0.2/-0.1 0.70 0.05 0.4 0.1 2.8+0.2/-0.3 1.9 0.2 0.16 0.05 0.00-0.10 0.25+0.3/-0.15 c f g h i j k 0.60 a f d b e c k h i 2 14 3 + _ + _ + _ + _ + _ + 0.1 _ 0.55 + 0.1 _ g i 12 43 electrical characteristics (ta=25 ) g 3 1 2 4 3 type name marking lot no. characteristic symbol test condition min. typ. max. unit forward voltage v f(1) i f =1ma - 0.60 - v v f(2) i f =10ma - 0.72 - v f(3) i f =100ma - 0.90 1.20 reverse current i r v r =80v - - 0.5 a total capacitance c t v r =0, f=1mhz - 0.9 3.0 pf reverse recovery time t rr i f =10ma - 1.6 4.0 ns characteristic symbol rating unit maximum (peak) reverse voltage v rm 85 v reverse voltage v r 80 v maximum (peak) forward current i fm * 300 ma average forward current i o * 100 ma surge current (10ms) i fsm * 2 a power dissipation p d ** 900 mw junction temperature t j 150 storage temperature range t stg -55 150 * : unit rating. (total rating=unit rating 1.5) ** : total rating, package mounted on a ceramic board (600 0.8 )
2/2 2005. 6. 21 KDS165T revision no : 0 1 0.1 reverse voltage v (r) r r t c - v reverse current i ( a) r 10 0 reverse voltage v (v) r total capacitance c (pf) 0 i - v i - v f forward voltage v (v) 0 f 10 forward current i (ma) ff 0.2 0.4 0.6 0.8 1.0 1.2 -2 -1 10 2 10 3 10 10 1 ta=100 c t a=25 c ta=-25 c rr 20 40 60 80 -3 -2 10 -1 10 1 10 ta=100 c ta=75 c ta=50 c ta=25 c t 0.4 0.8 1.2 1.6 2.0 3 10 30 100 f=1mhz ta=25 c t - i f forward current i (ma) 0.1 0.5 rr reverse recovery time t (ns) rr f 0.3 1 3 10 30 100 1 3 5 10 30 50 100 ta=25 c fig. 1 0.3 fig. 1. reverse recovery time(t ) test circuit rr 50 ? 2k ? e 50 ? input waveform input 0.01 f dut output sampling oscilloscope (r =50 ? ) in waveform 0.1 i r 0 i r f i =10ma rr t pulse generator (r =50 ? ) out 50ns -6v 0
|
